With the continuous evolution of wide bandgap semiconductor technology, silicon carbide (SiC) has become a key material for high-frequency, high-power electronic applications. However, to fully exploit its potential, SiC devices require comprehensive optimization in areas such as thermal management, signal linearity, e

With the rapid advancement of wide bandgap semiconductor technology, silicon carbide (SiC) has emerged as a key material in the field of high-frequency and high-power devices.
Its exceptional physical properties—wide bandgap, high thermal conductivity, high breakdown electric field, and high electron mobility&mda

Diamond, due to its exceptional hardness, ultra-high thermal conductivity, excellent wide bandgap semiconductor characteristics, and biocompatibility, holds great promise for applications in high-temperature and high-frequency electronic devices, optical windows, and heat spreaders. However, the preparation of large, h

As the world moves toward carbon neutrality and greater energy efficiency, a new generation of wide bandgap (WBG) semiconductors is reshaping the landscape of power and optoelectronic devices. Among them, Silicon Carbide (SiC) has emerged as a key material driving this transformation.
When used as a substrate, SiC not

As the demand for high-efficiency and high-reliability power electronics continues to grow, Silicon Carbide (SiC) has become the key enabling material in next-generation semiconductor technologies. Among the various forms of SiC materials, the 1mm-thick conductive SiC substrate stands out for its superior mechanical st

As power electronics and high-frequency devices continue to evolve, silicon carbide (SiC) substrates have become the foundation of next-generation semiconductor materials.
Among them, the 4H-N type (n-type) SiC substrate stands out for its wide bandgap, high thermal conductivity, and superior breakdown field strength &

As the fields of power electronics, optoelectronics, and advanced sensing technologies continue to evolve, research institutions are demanding higher-quality silicon carbide (SiC) materials. As a leading representative of third-generation semiconductors, SiC stands out with its wide bandgap, high thermal conductivity,

As the era of wide-bandgap semiconductors unfolds, silicon carbide (SiC) has emerged as a key material in high-power and high-frequency electronics, thanks to its superior thermal conductivity, high breakdown field, and chemical stability. Among various types of SiC materials, the semi-insulating (SI) silicon carbide s

As power electronics and RF devices continue to evolve, the requirements for substrate materials are becoming increasingly demanding. Silicon carbide (SiC), a leading third-generation semiconductor, is already widely used in electric vehicle drivetrains, photovoltaic inverters, fast chargers, 5G communications, and sat

In both power and RF semiconductor fields, silicon carbide (SiC) substrates have become a critical material. With the rise of electric vehicles, renewable energy, energy storage, and 5G communications, SiC substrate sizes have gradually expanded from 4-inch and 6-inch to 8-inch. However, while 8-inch conductive (N-type